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مشخصهیابی پارامترهای اپتیکی لایههای نازک سلنیدروی و سلنیدروی/مس به روش تبخیر خلاء | ||
| فصلنامه علمی اپتوالکترونیک | ||
| مقاله 4، دوره 7، شماره 4 - شماره پیاپی 21، تیر 1404، صفحه 39-44 اصل مقاله (564.99 K) | ||
| نوع مقاله: پژوهشی | ||
| شناسه دیجیتال (DOI): 10.30473/jphys.2025.72857.1222 | ||
| نویسندگان | ||
| رستم مرادیان1؛ معصومه ناصری تکیه* 2 | ||
| 1استاد، گروه فیزیک، دانشکده علوم، دانشگاه رازی، کرمانشاه، ایران. | ||
| 2دانشجوی دکتری، گروه فیزیک، دانشکده علوم، دانشگاه ملایر، ملایر، ایران. | ||
| چکیده | ||
| لایههای نازک سلنیدروی و سلنیدروی/مس با موفقیت به روش تبخیر خلاء تهیه شدند. با استفاده از طیفسنجی مرئی- فرابنقش خواص نوری آنها بررسی شد. در ناحیه شفاف، نمونه لایه نازک سلنیدروی عبور بهتری نسبت به لایه نازک سلنیدروی/مس را از خود نشان داد. ضریب شکست نمونه سلنیدروی در طول موجهای پایین به طول موج وابسته است اما در طول موجهای بیشتر از 600 نانومتر بدون وابستگی به طول موج و دارای مقدار ثابت حدوداً 5/1 است. برای نمونه سلنیدروی/مس ضریب شکست وابستگی کمی به طول موج مشاهده میشود و تقریبا مقدار بین 5/1 تا 6/1 را دارد. ضریب خاموشی برای هر دو نمونه با افزایش طول موج، کاهش مییابد. قسمت حقیقی و موهومی ثابت دی الکتریک به ترتیب رفتاری مشابه ضریب شکست و ضریب خاموشی از خود نشان دادند. از این مطالعه میتوان نتیجه گرفت که هر دو لایه نازک با چنین ویژگیهای نوری برای کاربردهای اپتوالکترونیکی مناسب هستند. | ||
| کلیدواژهها | ||
| سلنیدروی؛ سلنیدروی/مس؛ لایه نازک؛ ضریب شکست؛ ضریب خاموشی؛ ثابت دی الکتریک | ||
| عنوان مقاله [English] | ||
| Characterization of Optical Parameters of ZnSe and ZnSe/Cu Thin Films Using the Vacuum Evaporation | ||
| نویسندگان [English] | ||
| Rostam Moradian1؛ Masome Naseri Tekyeh2 | ||
| 1Professor, Physics Department, Faculty of Science, Razi University, Kermanshah, Iran. | ||
| 2Ph.D. Student, Physics Department, Faculty of Science, Malayer University, Malayer, Iran. | ||
| چکیده [English] | ||
| The ZnSe and ZnSe/Cu thin films successfully prepared using the vacuum evaporation method. Their optical properties investigated using UV-vis spectroscopy. The ZnSe thin film showed better transmission in the transparent region than the ZnSe/Cu thin film. The refractive index of the ZnSe sample depends on the wavelength at low wavelengths, but at wavelengths longer than 600 nm, it is independent of wavelength and has a constant value of about 1.5. For the ZnSe/Cu sample, the refractive index shows slight dependence on the wavelength and has an almost constant value between 1.5 and 1.6. The samples' extinction coefficient decreases with increasing wavelength. The real and imaginary parts of the dielectric constants illustrated the same behavior as the refractive index and extinction coefficient, respectively. From this study, it can be indicated that both thin films with these optical properties are suitable for optoelectronic applications. | ||
| کلیدواژهها [English] | ||
| ZnSe, ZnSe/Cu, Thin Film, Refractive Index, Extinction Coefficient, Dielectric Constant | ||
| مراجع | ||
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