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مدلسازی موجبر نوری نازکشده خطی معکوس از جنس نیترید سیلیکون در مدارهای مجتمع نوری | ||
| فصلنامه علمی اپتوالکترونیک | ||
| مقاله 13، دوره 8، شماره 2 - شماره پیاپی 23، دی 1404، صفحه 19-28 اصل مقاله (1.06 M) | ||
| نوع مقاله: پژوهشی | ||
| شناسه دیجیتال (DOI): 10.30473/jphys.2025.73408.1228 | ||
| نویسندگان | ||
| زینب حاجی جمالی آرانی* 1؛ تایماز فتح الهی خلخالی2 | ||
| 1پژوهشگاه علوم و فنون هسته ای | ||
| 2پژوهشکده فوتونیک و فناوریهای کوانتومی، پژوهشگاه علوم و فنون هستهای، تهران، ایران | ||
| چکیده | ||
| در این مقاله، به طراحی ساختار نوری موجبر نازکشده خطی معکوس ساخته شده از نیترید سیلیکون به عنوان متصلکننده موجبرهای چند میکرونی با موجبرهای چند دهم میکرونی در مدارهای مجتمع نوری پرداخته شده است. از آنجا که نحوه انتشار مدهای الکترومغناطیسی در ساختار موجبرها و به ویژه در موجبر نوری نازکشده، وابسته به عوامل مختلفی از جمله شکل و ابعاد و جنس موجبر میباشد، تاثیر جنبههای مختلف ساختار هندسی موجبر طراحی شده مورد تجزیه و تحلیل قرار میگیرد و توزیع فضایی میدان الکترومغناطیسی مدهای هدایتشده در این ساختار نیز بررسی میشود. با توجه به اهمیت میزان طیف عبوری در یک موجبر برای طراحی مدارهای مجتمع نوری در کامپیوترهای کوانتومی، این طیف با استفاده از محاسبات عددی با روش تفاضل محدود در حوزه زمان (FDTD) سهبعدی، شبیهسازی میشود و ساختار مناسب پیشنهادی با بازده بهتر از میان ساختارهایی تکمدی با ابعاد میکرونی، برای استفاده در کامپیوتر کوانتومی، ساختاری با طول μm 100 و پهنای خروجی μm 1 و پهنای ورودی μm 3/0 میباشد. | ||
| کلیدواژهها | ||
| موجبر تیپر؛ ساختار هندسی؛ روش تفاضل محدود در حوزه زمان سهبعدی؛ توزیع فضایی مدهای الکترومغناطیسی | ||
| عنوان مقاله [English] | ||
| Modeling of Silicon nitride inverse linear tapered optical waveguide in photonic integrated circuits | ||
| نویسندگان [English] | ||
| Zeinab Hajijamali-Arani1؛ Tymaz Fatolahi-Khalkhali2 | ||
| 1Photonics and Quantum Technologies Research School, Nuclear Science and Technology Research Institute (NSTRI), Tehran,Iran | ||
| 22. Assistant Prof., Photonics and Quantum Technologies Research School, Nuclear Science and Technology Research Institute (NSTRI), Tehran | ||
| چکیده [English] | ||
| In this research, the photonic structure of an inverse linear tapered waveguide made of silicon nitride is investigated. This structure serves as a connector between a few micron-sized waveguides and sub-micrometer waveguides in photonic integrated circuits. Since the propagation of electromagnetic modes in the structure of waveguides, especially in tapered waveguides, depends on the shape, dimensions, and material of the waveguide, the investigations of various aspects of the mentioned geometric structure are analyzed. The distribution of electromagnetic field for guided modes in this structure is also studied. Considering the importance of the transmission spectrum of a waveguide for the design of integrated photonic circuits, this will be simulated using the 3D finite-difference time-domain (FDTD) method. Among the selected single-mode structures, an optimized structure with improved efficiency is obtained. This structure has a length of 100 μm, an output width of 1 μm, and an input width of 0.3 μm. | ||
| کلیدواژهها [English] | ||
| Tapered waveguide, Geometric structure, 3D FDTD method, Electromagnetic modes | ||
| مراجع | ||
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آمار تعداد مشاهده مقاله: 659 تعداد دریافت فایل اصل مقاله: 177 |
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